基于各向异性Ga2O3/MgO异质外延结构的太阳盲紫外偏振成像光电探测器

$\beta $ -Ga2O3 is a promising candidate for solar-blind ultraviolet (UV) polarization detection because of its ultrawide bandgap and low-symmetry monoclinic crystal structure. Herein, an anisotropic $\beta $ -Ga2O3 (−102) $\vert \vert $ MgO (110) heteroepitaxial structure was successfully fabricated via plasma-enhanced chemical vapor deposition (PECVD) method. The film quality and optoelectronic characteristics of $\beta $ -Ga2O3 (−102) were systematically investigated. Compared with $\beta $ -Ga2O3 (−201) $\vert \vert $ Al2O3 (0001) epitaxial structure, the $\beta $ -Ga2O3 (−102) $\vert \vert $ MgO (110)-based UV photodetector (PD) demonstrates superior performance, exhibiting a lower dark current of $3{\textbf {.}}67\times 10^{\textbf {-{13}}}$ A, a larger photo-to-dark current ratio (PDCR) exceeding $1{\textbf {.}}23\times 10^{\textbf {{7}}}$ , and a higher responsivity of 114.4 A/W under 254-nm UV light at 5-V bias. Moreover, the polarization sensitivity of the anisotropic $\beta $ -Ga2O3 (−102) thin films was verified, and its solar-blind UVPD device possessed polarization imaging functionality.