高温增强型Ga₂O₃单片双向开关，击穿电压超6.5 kV

This work demonstrates an enhancement-mode (E-mode) Ga2O3 monolithic bidirectional switch (MBDS) capable of high-temperature operation, achieving breakdown voltages (BV) exceeding 6.5 kV in both polarities at $150~^{\circ }$ C and maintaining 4.7 kV at $200~^{\circ }$ C. The device incorporates two highly doped NiO heterojunction gates, each connected to a lightly doped NiO junction termination extension (JTE) for electric field management. It exhibits symmetric conduction characteristics with a threshold voltage ( $\textit{V}_{\textit{TH}}\text {)}$ of 1.9 V and a specific on-resistance ( $\textit{R}_{{\textit {on}}, \textit{sp}}$ ) of 1755 m $\Omega \cdot $ cm2. Even at $200~^{\circ }$ C, $\textit{V}_{\textit{TH}}$ remains positive while $\textit{R}_{{\textit {on}}, \textit{sp}}$ increases by only $1.3\times $ . This represents the best performance reported for ultra-wide bandgap (UWBG) E-mode MBDS devices and the first demonstration of a kilovolt MBDS operational up to $200~^{\circ }$ C. These results suggest the potential of Ga2O3 MBDS for high-temperature, high-voltage applications.