Gate-First/Channel-Last Process for High-Performance a-IGZO Gate-All-Around Nanosheet FETs

Shipeng Wang · Chuanke Chen · Congyan Lu · Chen Gu 等18人 · IEEE Electron Device Letters · 2025年12月 · Vol.47

This work demonstrated a high-performance gate-all-around (GAA) a-IGZO nanosheet transistor fabricated using a simplified gate-first, channel-last process. The key functional layers (gate insulator, channel) are deposited continuously in one low-temp...