双芯片封装碳化硅肖特基势垒二极管的浪涌电流能力

Abstract The surge current capability is one of the important key parameters for the application of silicon carbide (SiC) Schottky barrier diode (SBD) in power converters. A comparison is conducted between the surge current capability of single-chip packaged SiC SBD and dual-chip packaged SiC SBD. The result indicates that the dual-chip SBD with the same power has a higher nonrepetitive surge current limit. This article also focuses on the prediction of nonrepetitive surge current limits for dual-chip packaged SiC SBDs using an electrothermal model. The simulation and the actual device test results are matching well within 2.8% margin. Thus, it represents this simulation model that can be applied to predict the surge current capacity of the dual-chip packaged SiC SBD.