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功率器件技术 ★ 2.0

Orbit-Torque Spintronic Devices for Variation-Robust Neuromorphic Computing

Orbit-Torque Spintronic Devices for Variation-Robust Neuromorphic Computing

作者 Junwei Zeng · Jiahao Liu · Shan Qiu · Aihua Tang · Teng Xu · Liang Fang · Yang Guo
期刊 IEEE Electron Device Letters
出版日期 2025年12月
卷/期 第 47 卷 第 2 期
技术分类 功率器件技术
相关度评分 ★★ 2.0 / 5.0
关键词
Brain-inspired spintronic artificial neural networks (ANNs) have emerged as promising candidates for next-generation computing systems, yet conventional spin-orbit torque (SOT) devices face challenges of high current density ( $10^{{11}}$ – $10^{{12}}$ A/m2) and Joule heating-induced variability. Here, we introduce orbit torque (OT) derived from light metal Ti (effective orbit Hall angle $\approx ~0.4$ ) to drive ferromagnetic synapses and neurons with a biologically inspired continuously differentiable exponential linear unit (CeLu) activation function. We systematically characterize device variations, including cycle-to-cycle (CTC) and device-to-device (DTD) fluctuations, and reveal that Joule heating significantly contributes to CTC variability through finite element and micromagnetic simulations. Optimizing the neural network depth reduces error propagation induced by CTC variation. Moreover, the network exhibits higher tolerance to DTD variations compared to CTC variations. Our OT-driven all-spin ANN achieves a recognition accuracy of $90.1 \pm ~0.2$ % on the MNIST dataset under combined synaptic and neural CTC and DTD variations. This work provides a viable path towards low-power neuromorphic computing systems by leveraging OT’s advantages of reduced thermal dissipation and stable switching characteristics.

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