High-Q MEMS Resonant Differential Pressure Sensor Using Wafer-Level Through-Glass-Via Packaging to Surmount Anodic Bonding Limitations

This letter introduces a high-performance MEMS resonant differential pressure sensor with a dual-diaphragm coupled structure, designed for enhanced accuracy in aerospace and industrial applications. Traditional anodic bonding fails due to electrical shorting in devices with vertical interconnects. We address this by employing a wafer-level Through-Glass Via (TGV) packaging technique, achieving hermetic sealing and low-resistance feedthroughs. Theoretical and experimental analyses demonstrate that low-resistivity silicon pillars ( $\lt 0.01~\Omega \cdot $ cm) reduce the series resistance to $51.3~\Omega $ , lowering the electrical damping coefficient and boosting the quality factor (Q-factor) by over 100% (from 16,539 to 33,269). The sensor exhibits a sensitivity of 44.17 Hz/kPa, frequency stability of 0.035 Hz at 1 s integration time, and accuracy better than 0.027% full-scale output (FSO) over -45°C to 45°C, outperforming state-of-the-art designs and validating TGV as a superior solution for advanced MEMS resonators.