基于Si/SiC混合器件与新型调制策略的混合型NPC-DAB变换器性能优化

This article investigates a hybrid Si–SiC device-based neutral-point-clamped (NPC) dual-active bridge (HNPC-DAB) converter. The switches in the hybrid neutral point clamped (HNPC)-DAB converter are appropriately selected as Si-insulated gate bipolar transistor (IGBT) and/or SiC-MOSFET to achieve optimal switch utilization. A suitable multi phase shift (MPS) modulation scheme is also developed to utilize the multilevel characteristics of the HNPC-DAB converter and complement the switch selection. The converter steady state model is developed for the identified possible operating modes of the MPS modulation. The model maps and identifies the converter’s feasible zero-voltage-switching (ZVS) region as a function of the degrees of freedom (DoFs). At last, the available DoFs with MPS are utilized to minimize the transformer peak current. The optimal MPS significantly minimizes the transformer peak current and ensures ZVS on a wide output voltage range. MPS modulation’s effectiveness is evident with a reduction in both the switching and conduction losses compared to triple phase shift (TPS) modulation. Finally, a laboratory prototype of the HNPC-DAB converter (0.8 kW) is developed for experimental validation of topology and modulation. The closed-loop experimental results validate the superior performance of the HNPC-DAB converter with the proposed MPS over TPS modulation, ensuring optimal switch utilization over a wide voltage and power range.