基于工业标准晶向的硅纳米片与FinFET中量子限制效应的半经典蒙特卡洛仿真

This work investigates the effect of quantum confinement (QC) on the performance of FinFETs and nanosheet FETs (NSFETs) with industry standard <110> transport direction on (100) silicon wafers, using three- dimensional semi-classical Monte Carlo simulation with quantum corrections. Due to different QC directions, NSFETs, unlike FinFETs, exhibit greater occupation of valleys with lower transport effective mass. Furthermore, QC effects, which increase phonon and surface roughness scatterings, are relatively less detrimental in NSFETs as the lowest energy valleys in NSFETs have relatively larger QC effective mass. Consequently, NSFETs deliver higher drive current than FinFETs of the same channel cross- section. The influence of gate length and channel thickness also is analyzed, with optimal performance achieved at a gate length of 15-17 nm and channel thickness of 4-4.5 nm. These results highlight the critical role of QC in nanoscale device behavior and demonstrate the advantage of NSFETs for future technology nodes.