采用双层ALD温度堆叠的无唤醒延迟HfO2/ZrO2超晶格三阶单元铁电存储器

A bilayer superlattice (SL) Hf ${}_{\mathbf {x}}$ Zr ${}_{\mathbf {{1}-{x}}}$ O ${}_{\mathbf {{2}}}$ (HZO) stack is developed to combine the high endurance of low-temperature ALD (LTD) with the strong polarization benefits of high-temperature ALD (HTD). The optimized 5-nm HTD-SL/5-nm LTD-SL (HLTD) configuration demonstrates wake-up-free switching and suppressed fatigue. The resulting FeCAPs enable 3-bit/cell functionality with eight well-separated and stable polarization states sustained beyond $10^{\mathbf {{8}}}$ cycles. These findings indicate that the proposed bilayer SL-HZO architecture holds strong potential for high-density embedded FeRAM applications.