基于氮化铝的多层薄膜电容器结构与性能研究

In the ceramic capacitor industry, the trend toward high densities and low impedances at broadband frequencies (MHz–GHz) has led to the development of thinner dielectrics and inner electrodes for use in multilayer ceramic capacitors (MLCCs). Consequently, the market share of three-terminal MLCCs and Si capacitors is rising due to their low equivalent series inductances (ESLs). In this study, we fabricate multilayer thin-film capacitors (MLTCs) using thin-film processes. These capacitors include AlN (paraelectric) and Mo/Ti electrodes, which have a thickness of 30 nm and are composed of 80 or 247 layers. Furthermore, their capacitances are 17 or 43 nF, and their ESLs are approximately 30 pH, considerably lower than normal MLCCs (83 pH). However, the occurrence of wrinkles caused by the surface roughness during the stacking process complicates the fabrication of MLTCs. In addition, the etching technology for dielectrics and electrode materials requires improvement to remove by-products effectively. Therefore, this research introduces possible fabrication processes for MLTCs and measures their various characteristics as capacitors. Furthermore, we verify the potential of MLTCs for high-density, low-ESL capacitors in advanced electronic circuits operating at higher frequencies and compare the results with those of other capacitors, including Si capacitors. The study confirms that MLTCs offer superior capacitance compared to Si capacitors, rendering them potential candidates for high-frequency communication modules and compact electronic devices.