一种具有屏蔽孔路径以降低EMI噪声的新型沟槽型IGBT

A novel trench insulated gate bipolar transistor (IGBT) with shielding hole path (SHP) is proposed and experimentally demonstrated. During turn-on, the SHP shields the gate–collector coupling and provides a hole path (HP) near the main current path. A hole barrier is introduced near the gate trench to shield hole accumulation and form a hole depletion region. A hole well is introduced near the split-gate (SG) trench to enhance hole extraction through the SHP. Consequently, the displacement current that charges the gate electrode is effectively suppressed through the reduction of both the effective ${C}_{\text {GC}}$ for holes and $\textit {dV}_{\text {acc}}$ /dt. The experimental results show that, compared to the floating P-Region IGBT (FP-IGBT), the SHP-IGBT achieves a 49.0% lower $\textit {dI}_{\text {C}}$ /dt at the same ${R}_{\text {G}}$ and a 54.7% lower $\textit {dV}_{\text {KA}}$ / $\textit {dt}_{\max }$ at the same ${E}_{\text {on}}$ , reducing electromagnetic interference (EMI) noise without degrading other electrical parameters. In addition, a refined displacement current model incorporating the effective ${C}_{\text {GC}}$ for holes is proposed.